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High power, single-mode operation from photonic-lattice semiconductor lasers with controllable lateral resonance
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10.1063/1.2180443
/content/aip/journal/apl/88/9/10.1063/1.2180443
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/9/10.1063/1.2180443
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic device cross section with transverse-field profiles in the low- and high-index sites of the APC structure. Details of the preferentially regrown GaAs region are shown in the blown-up portion.

Image of FIG. 2.
FIG. 2.

Percentage of the field intensity residing in the low-index APC sites for modes of a 20-element structure as a function of the thickness of the regrown material. Mode 38 is the in-phase mode (Ref. 12), modes 37 and 39 are adjacent modes, and modes 19 and 57 are out-of-phase modes. The vertical arrow indicates the in-phase mode (lateral) resonance.

Image of FIG. 3.
FIG. 3.

Threshold-current densities of relevant modes of a 20-element APC structure vs the thickness of the regrown material. (a) No free-carrier absorption loss in the high-index sites; (b) free-carrier absorption from the heavily doped portion of the regrown material (Fig. 1).

Image of FIG. 4.
FIG. 4.

Characteristics of 20-element device of aperture and uncoated facets: (a) Lateral far-field patterns as a function of the drive level above threshold, . The diffraction limit is 0.6°. is . (b) Light-current curve in pulsed operation.

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/content/aip/journal/apl/88/9/10.1063/1.2180443
2006-03-02
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High power, single-mode operation from photonic-lattice semiconductor lasers with controllable lateral resonance
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/9/10.1063/1.2180443
10.1063/1.2180443
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