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Effect of gettered iron on recombination in diffused regions of crystalline silicon wafers
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10.1063/1.2181199
/content/aip/journal/apl/88/9/10.1063/1.2181199
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/9/10.1063/1.2181199

Figures

Image of FIG. 1.
FIG. 1.

Effective lifetimes as a function of excess carrier density for the light boron diffusions. The solid lines are fits to determine the bulk lifetime and emitter components.

Image of FIG. 2.
FIG. 2.

Emitter saturation currents for the boron diffused samples as a function of Fe dose.

Image of FIG. 3.
FIG. 3.

Emitter saturation currents for the phosphorus diffused samples as a function of Fe dose.

Image of FIG. 4.
FIG. 4.

Relative spectral photoconductance of the control sample and the highest Fe dose sample with heavy boron diffusions.

Tables

Generic image for table
Table I.

Extracted bulk lifetimes at for the controls and heaviest Fe dose, and corresponding values of , [Fe] in the base, and the percentage of Fe gettered to the surface diffusions.

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/content/aip/journal/apl/88/9/10.1063/1.2181199
2006-02-28
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of gettered iron on recombination in diffused regions of crystalline silicon wafers
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/9/10.1063/1.2181199
10.1063/1.2181199
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