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Impurity-induced phase stabilization of semiconductors
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10.1063/1.2218311
/content/aip/journal/apl/89/1/10.1063/1.2218311
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/1/10.1063/1.2218311
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the band structure of zinc-blende and wurtzite semiconductors without spin-orbit interaction. The valence and conduction band offsets ( and ) are also shown.

Image of FIG. 2.
FIG. 2.

(Color online) Energy difference between the wurtzite and the zinc-blende phases for AlN, GaN, and ZnO as a function of the carrier density. The carrier density is in units of electrons/holes per two-atom unit cell. The slopes are 1.4491 for AlN, 0.2493 for GaN, 0.1192 for ZnO when induced by electrons, and for ZnO when induced by holes.

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/content/aip/journal/apl/89/1/10.1063/1.2218311
2006-07-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impurity-induced phase stabilization of semiconductors
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/1/10.1063/1.2218311
10.1063/1.2218311
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