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Nanoscale epitaxial overgrowth process and properties of GaN layers on Si (111) substrates
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10.1063/1.2218670
/content/aip/journal/apl/89/1/10.1063/1.2218670
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/1/10.1063/1.2218670
/content/aip/journal/apl/89/1/10.1063/1.2218670
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/content/aip/journal/apl/89/1/10.1063/1.2218670
2006-07-05
2014-08-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoscale epitaxial overgrowth process and properties of GaN layers on Si (111) substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/1/10.1063/1.2218670
10.1063/1.2218670
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