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Comment on “Schottky barrier heights of metal contactsto -type gallium nitride with low-temperature-grown cap layer” [Appl. Phys. Lett.88, 032103 (2006)]
2.M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, S. J. Chang, C. J. Kao, C. J. Tun, M. G. Chen, W. H. Chang, G. C. Chi, and J. M. Tsai, J. Appl. Phys. 94, 1753 (2003).
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