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(Color online) (a) Simplified circuit equivalent of the QCA cell, (b) SEM image of phosphorus-implanted regions (dark in image), and (c) SEM image of completed device. The buried dots and leads are marked using dashed lines.
(Color online) SET conductance intensity plots as functions of respective half-cell control gate voltages. A plane is subtracted from the raw data to remove direct gate-SET coupling. Effective gate polarizations are shown in the plots as and . (a) SET- conductance showing electron occupancy (, ) within half-cell . (b) SET- conductance, with half-cell occupancies labeled similarly.
(Color online) Normalized charge induced on the two SETs as a function of gate polarization . Direct gate-SET coupling was subtracted from the raw data. (a) Half-cell is biased at point . QCA operation is not observed; (b) half-cell is biased at point . As is swept, SET- detects electron tunneling in half-cell , which induces a transition in half-cell (see inset). QCA operation is therefore realized.
(Color online) Normalized charge induced on (a) SET- and (b) SET- as a function of gate polarizations and . A plane is subtracted from the raw data to remove the direct gate-SET coupling. For explanation see text.
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