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Erratum: Recording of cell action potentials with field-effect transistors [Appl. Phys. Lett.86, 033901 (2005)]
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1.A. Balandin, S. Cai, R. Li, K. L. Wang, V. R. Rao, and C. R. Viswanathan, IEEE Electron Device Lett. 19, 475 (1998).
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2.J. A. Garrido, B. E. Foutz, J. A. Smart, J. R. Shealy, M. J. Murphy, W. J. Schaff, L. F. Eastman, and E. Munoz, Appl. Phys. Lett. 76, 3442 (2000).
http://dx.doi.org/10.1063/1.126672
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/content/aip/journal/apl/89/1/10.1063/1.2219129
2006-07-06
2014-09-01

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Scitation: Erratum: Recording of cell action potentials with AlGaN∕GaN field-effect transistors [Appl. Phys. Lett.86, 033901 (2005)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/1/10.1063/1.2219129
10.1063/1.2219129
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