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Loss of photocurrent efficiency in low mobility semiconductors: Analytic approach to space charge effects
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10.1063/1.2219132
/content/aip/journal/apl/89/1/10.1063/1.2219132
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/1/10.1063/1.2219132
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Numerically calculated (Ref. 16) photocurrent as a function of excitation power density. The dashed line is linear extrapolation of the low intensity regime.

Image of FIG. 2.
FIG. 2.

(Color online) Normalized photocurrent efficiency as a function of excitation power density. Filled circles were derived using the full numerical model (Ref. 16). The full line was calculated using the analytic expression in Eq. (5). The dashed line was calculated using the nonapproximated recombination model (Ref. 14) [Eq. (6)].

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/content/aip/journal/apl/89/1/10.1063/1.2219132
2006-07-05
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Loss of photocurrent efficiency in low mobility semiconductors: Analytic approach to space charge effects
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/1/10.1063/1.2219132
10.1063/1.2219132
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