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Carrier trap passivation in multicrystalline Si solar cells by hydrogen from layers
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10.1063/1.2219142
/content/aip/journal/apl/89/1/10.1063/1.2219142
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/1/10.1063/1.2219142
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

of Cz-Si and mc-Si cells with antireflection coatings deposited at given as a function of .

Image of FIG. 2.
FIG. 2.

of mc-Si substrates with and different firing sequences.

Image of FIG. 3.
FIG. 3.

of mc-Si substrates, hydrogenated with . Subsequently the was removed and the samples were annealed for with the indicated temperature. was used for surface passivation.

Image of FIG. 4.
FIG. 4.

[(a) and (b)] and in relation to of neighboring substrates, measured on two different positions on the substrates.

Image of FIG. 5.
FIG. 5.

(closed squares) and (open triangles) measured on EMC mc-Si in relation to .

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/content/aip/journal/apl/89/1/10.1063/1.2219142
2006-07-06
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier trap passivation in multicrystalline Si solar cells by hydrogen from SiNx:H layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/1/10.1063/1.2219142
10.1063/1.2219142
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