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Capacitance-voltage characterization of polyfluorene-based metal-insulator-semiconductor diodes
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10.1063/1.2219147
/content/aip/journal/apl/89/1/10.1063/1.2219147
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/1/10.1063/1.2219147
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Capacitance-voltage characteristics of MIS diode at . The arrows indicate the sweep direction of the gate bias voltage. The inset shows the curve for the controlled sample: . (b) Frequency dependence of the curves for the device in (a). The inset exhibits the frequency-dependent curves of the controlled sample.

Image of FIG. 2.
FIG. 2.

Frequency dependence of from MIS diode. The inset shows vs gate bias voltage for five different frequencies in the deep depletion region.

Image of FIG. 3.
FIG. 3.

Interface state density vs gate bias voltage. The inset shows the equivalent parallel conductance vs frequency.

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/content/aip/journal/apl/89/1/10.1063/1.2219147
2006-07-05
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Capacitance-voltage characterization of polyfluorene-based metal-insulator-semiconductor diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/1/10.1063/1.2219147
10.1063/1.2219147
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