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(a) Capacitance-voltage characteristics of MIS diode at . The arrows indicate the sweep direction of the gate bias voltage. The inset shows the curve for the controlled sample: . (b) Frequency dependence of the curves for the device in (a). The inset exhibits the frequency-dependent curves of the controlled sample.
Frequency dependence of from MIS diode. The inset shows vs gate bias voltage for five different frequencies in the deep depletion region.
Interface state density vs gate bias voltage. The inset shows the equivalent parallel conductance vs frequency.
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