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Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses
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10.1063/1.2219150
/content/aip/journal/apl/89/1/10.1063/1.2219150
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/1/10.1063/1.2219150

Figures

Image of FIG. 1.
FIG. 1.

(a) LEIS spectra of ions detected at a scattering angle of 126° for a nanolaminated film on submitted to postdeposition annealing at the indicated temperatures.

Image of FIG. 2.
FIG. 2.

(a) Excitation curves of the nuclear reaction for an Al-rich structure on Si before and after RTA in of . The Al profiles obtained simulating the excitation curves are shown in the inset. (b) Hf region of the MEIS spectra for a Hf-rich structure on Si before and after RTA in of . The difference spectrum is shown in the inset.

Image of FIG. 3.
FIG. 3.

Excitation curves of the nuclear reaction for the Hf- and Al-rich structures of Fig. 2 before (solid symbols) and after (empty symbols) RTA in of . The excitation curve for a bare Si wafer is also shown to indicate the proton energy corresponding to at the surface.

Image of FIG. 4.
FIG. 4.

Excitation curves of the nuclear reaction for (a) nitrided Al-rich and (c) Hf-rich structures before (solid symbols, solid lines) and after (empty symbols, dashed lines) RTA in of . (b) and (d) show the corresponding N profiles before (solid line) and after RTA (dashed line) obtained from simulation of the excitations curves. The N concentration was corrected using the 10% isotopic enrichment labeling of the atmosphere used for nitridation. The profiles in the Al-rich (b) and Hf-rich (c) structures after the RTA in are also shown (dotted line). The vertical arrows indicate the areal density corresponding to the aluminate films and the surface.

Tables

Generic image for table
Table I.

Hf and Al areal densities in structures after RTA in the indicated atmosphere. Areal densities are normalized by their corresponding value in the as-deposited structure. Typical uncertainties are 3% and 15% for the normalized Hf and Al areal densities, respectively. The missing values were not measured or the annealing sequence was not performed.

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/content/aip/journal/apl/89/1/10.1063/1.2219150
2006-07-06
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/1/10.1063/1.2219150
10.1063/1.2219150
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