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Inverted spin polarization of Heusler alloys for spintronic devices
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Calculated band structure of electrons of and (Ref. 16). Please note the gap in the spin down density of states and, subsequently, the sudden increase at positive energies. This leads to positive spin polarization at zero bias and negative values above in the experiment. The blue, black, and red curves show a bias voltage of , zero, and , respectively.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Positive TMR at zero bias. (b) Positive TMR at . (c) Negative TMR at . (d) Typical bias voltage dependence of the TMR ratio.

Image of FIG. 3.
FIG. 3.

(Color online) (Top) Electrical circuit of the two magnetic tunnel junctions without input leads and definition of the output function. (bottom) Programming of the junctions and input definition. M2 is the fixed and M1 the free electrode.

Image of FIG. 4.
FIG. 4.

(Color online) Set of the magnetic alignment and the applied bias voltage to define the logic function: (top) AND and (bottom) NAND; analogous selection of all other functions. The magnetization of the free electrode can only switch if both input currents have the same sign.

Image of FIG. 5.
FIG. 5.

(Color online) Demonstration gate of two magnetic tunnel junctions switched to the desired logic function and measured in the remanent state at room temperature. The Heusler alloy was used due to the minority peak closer to the Fermi energy and therefore a lower operating voltage of .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inverted spin polarization of Heusler alloys for spintronic devices