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Influence of V/III molar ratio on the formation of In vacancies in InN grown by metal-organic vapor-phase epitaxy
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10.1063/1.2219335
/content/aip/journal/apl/89/1/10.1063/1.2219335
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/1/10.1063/1.2219335

Figures

Image of FIG. 1.
FIG. 1.

The parameters as a function of positron implantation energy measured in samples grown with V/III molar ratios larger than 4000.

Image of FIG. 2.
FIG. 2.

The parameters in samples grown with V/III molar ratios below 5000. The parameter increases at higher positron implantation energies which indicates that the vacancy concentration increases towards the interface.

Image of FIG. 3.
FIG. 3.

The parameter as a function of the parameter. The linearity between the layer specific parameters indicates that the same kind of vacancy (In vacancy) is present in all the layers. The parameters for vacancy clusters, formed close to the interface, form a line with a gentler slope and are thus distinguishable from the In vacancies.

Image of FIG. 4.
FIG. 4.

The parameter as a function of positron implantation energy in InN samples grown at different temperatures. The layer specific parameter increases when the growth temperature is raised.

Tables

Generic image for table
Table I.

Growth parameters of the measured samples and the vacancy concentrations estimated from the results of positron annihilation measurements.

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/content/aip/journal/apl/89/1/10.1063/1.2219335
2006-07-06
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of V/III molar ratio on the formation of In vacancies in InN grown by metal-organic vapor-phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/1/10.1063/1.2219335
10.1063/1.2219335
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