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The parameters as a function of positron implantation energy measured in samples grown with V/III molar ratios larger than 4000.
The parameters in samples grown with V/III molar ratios below 5000. The parameter increases at higher positron implantation energies which indicates that the vacancy concentration increases towards the interface.
The parameter as a function of the parameter. The linearity between the layer specific parameters indicates that the same kind of vacancy (In vacancy) is present in all the layers. The parameters for vacancy clusters, formed close to the interface, form a line with a gentler slope and are thus distinguishable from the In vacancies.
The parameter as a function of positron implantation energy in InN samples grown at different temperatures. The layer specific parameter increases when the growth temperature is raised.
Growth parameters of the measured samples and the vacancy concentrations estimated from the results of positron annihilation measurements.
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