Full text loading...
(a) Bias scan 1 (◻), , scan 2 (엯), , and scan 3 (▵), depict three of the many possible conductance states of an ITO/MEH-PPV/Al device. The location of the for each of these states is indicated. The inset shows the device structure. (b) Six current-voltage scans show the cyclic behavior of the switching between three distinct conductance states. A region of NDR can be seen when a given scan exceeds a peak conductance.
A demonstration of several conductance states at low read voltages (hinting that a continuum of states is possible). The programing voltages for these states are 3, 3.5, 4, 4.5, 5, 5.5, 6, 7, 8, 9, 10, 11, 12, 13, 15, and (from top to bottom). Once programed, a scan from is used to read the state of the device.
Extended time response of both a high and a low conducting state programed with 3 and , respectively. A probe bias of is used to show the nonvolatile nature of these two states over a period.
Article metrics loading...