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(Color online) (a) Plan view of a head-to-head transverse magnetic domain wall structure within a planar magnetic nanowire calculated micromagnetically. The arrows represent magnetization direction and the color magnetization in the direction. Also indicated are the orthogonal , , and directions. (b) Calculated domain wall stray magnetic field modulus as a function of distance along the center line normal to the nanowire with no external field (●), and (▴), and and (∎). The dotted lines show the magnitude of the externally applied fields. The inset shows a contour plot of the magnetic field modulus in the plane close to an atom trap at .
(a) Required applied field bias as a function of trap height above nanowire. (b) Frequency of the domain wall atom trap in the (∎), (▴), and (●) directions for a atom in the , state as a function of trap height. Both were calculated using a cell size.
(Color online) Proposed magnetic nanowire “tile” network to allow optical addressing of individual atom traps in some regions and interaction between trapped atoms in others. The two dotted square tiles each contain a design of magnetic nanowires that may be tessellated to create larger structures with full interaction between a large number of atom traps. The dotted circles are example regions of where optically induced Hadamard operations or atomic interactions may be performed.
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