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Self-organization of step bunching instability on vicinal substrate
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10.1063/1.2345223
/content/aip/journal/apl/89/10/10.1063/1.2345223
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/10/10.1063/1.2345223
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Surface morphology during deposition of 1 ML at : (a) starting surface with regular train of ML steps and after deposition of (b) 0.25, (c) 0.5, and (d) 1 ML. Simulation cell size is sites with a terrace length sites.

Image of FIG. 2.
FIG. 2.

(Color online) Morphology of silicon layers obtained by KMC simulation after the deposition of 800 ML at (a) 200, (b) 300, and (c) . Simulation cell consists of sites with 32 terraces of 10 sites wide, separated by monoatomic steps. For comparison, experimental morphologies obtained for each regime are presented. Scan areas are .

Image of FIG. 3.
FIG. 3.

(Color online) AFM images of silicon layers deposited on Si (001) misorientated of 1.5° towards [1-10] with deposited thickness of (a) 50, (b) 100, (c) 300, and (d) . Scan area is .

Image of FIG. 4.
FIG. 4.

(Color online) Morphological evolution of (a) rms roughness and (b) correlation length as a function of experimental deposited thickness . (c) Height-height correlation function, , as a function of correlation distance calculated from the simulations at different deposited thickness.

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/content/aip/journal/apl/89/10/10.1063/1.2345223
2006-09-08
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-organization of step bunching instability on vicinal substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/10/10.1063/1.2345223
10.1063/1.2345223
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