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Investigation of dark line defects induced by catastrophic optical damage in broad-area AlGaInP laser diodes
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10.1063/1.2345225
/content/aip/journal/apl/89/10/10.1063/1.2345225
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/10/10.1063/1.2345225
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Electroluminescence from the output facet of a laser (a) before and (b) after COD. Dark spots can be identified on the output facet where the COD occurred.

Image of FIG. 2.
FIG. 2.

mapping of an etched laser after COD and a magnification of the output facet region. The DLDs start from the output facet, split into many branches, and propagate up a distance of more than half the resonator length, in a direction perpendicular to the front mirror of the laser ( PL intensity, PL intensity).

Image of FIG. 3.
FIG. 3.

FIB cut through a laser after COD, uncovering a DLD. Different epitaxial layers as well as a defect in the middle of the active region, namely, in the InGaP QW and partially in the AlGaInP waveguides, can be identified.

Image of FIG. 4.
FIG. 4.

(a) Microscope top view near the output facet of a laser deep etched down into the layer. DLDs become visible because they etch at a slower rate than the surrounding “good” crystalline material. (b) FIB top-view image of another deep-etched laser after COD showing the semicircular structure of DLDs.

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/content/aip/journal/apl/89/10/10.1063/1.2345225
2006-09-06
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of dark line defects induced by catastrophic optical damage in broad-area AlGaInP laser diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/10/10.1063/1.2345225
10.1063/1.2345225
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