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Determination of junction temperature in light emitting diodes by self-excited photoluminescence signal
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10.1063/1.2345587
/content/aip/journal/apl/89/10/10.1063/1.2345587
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/10/10.1063/1.2345587
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature-dependent chip spectra at . From top to bottom, the temperatures of the curves are 310, 330, 350, 370, 390, 410, and .

Image of FIG. 2.
FIG. 2.

(a) Circles indicate peak positions of the quantum well EL signal at various temperatures; the solid line indicates the linear fit with a slope of . (b) The squares depict the peak positions of the GaAs PL signal at various temperatures. Solid, short dashed, and long dashed lines are obtained from the Varshni equations, (Ref. 17), (Ref. 18), and (Ref. 19), respectively.

Image of FIG. 3.
FIG. 3.

(a) Spectra of the chip biased at various currents with a chuck temperature of . (b) Peak positions of the quantum well EL signals (circles) and the GaAs substrate PL signals (squares) at various currents.

Image of FIG. 4.
FIG. 4.

Junction temperatures measured by the emission peak energy shift method (circles) and by the self-excited GaAs PL method (squares).

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/content/aip/journal/apl/89/10/10.1063/1.2345587
2006-09-07
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of junction temperature in AlGaInP∕GaAs light emitting diodes by self-excited photoluminescence signal
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/10/10.1063/1.2345587
10.1063/1.2345587
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