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InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers
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10.1063/1.2347115
/content/aip/journal/apl/89/10/10.1063/1.2347115
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/10/10.1063/1.2347115

Figures

Image of FIG. 1.
FIG. 1.

Structural schematics of samples 1, 2, and 4 (a), and sample 3 (b), respectively.

Image of FIG. 2.
FIG. 2.

(a) Time-integrated PL spectra measured at for samples 1–4. (b) PL lifetime measured at for samples 1–4. Open circles are the experimental results and solid curves are the fitting results using Eq. (1).

Image of FIG. 3.
FIG. 3.

Potential fluctuation of InGaN QWs plotted as a function of the mobility-edge-like energy . values of InGaN QWs on InGaN ULs, samples 1–5 (closed circles) are compared with those on GaN ULs (samples 6 and 7) (closed triangles) and those reported in the literature (closed diamonds): (a) Ref. 17, (b) Ref. 18, and (c) Ref. 11.

Image of FIG. 4.
FIG. 4.

(a) EL spectra obtained from violet LEDs using an InGaN UL and a GaN UL at room temperature. The injected current (density) was . (b) Integrated EL intensity plotted as a function of the injected current for violet LEDs using an InGaN UL (closed circles) and a GaN UL (closed triangles).

Tables

Generic image for table
Table I.

Obtained fitting parameters: the transfer of excitons to the local potential minima at the lower energy side , the energy similar to the mobility edge , and the depth of localization (potential fluctuation) .

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/content/aip/journal/apl/89/10/10.1063/1.2347115
2006-09-06
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/10/10.1063/1.2347115
10.1063/1.2347115
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