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Structural schematics of samples 1, 2, and 4 (a), and sample 3 (b), respectively.
(a) Time-integrated PL spectra measured at for samples 1–4. (b) PL lifetime measured at for samples 1–4. Open circles are the experimental results and solid curves are the fitting results using Eq. (1).
Potential fluctuation of InGaN QWs plotted as a function of the mobility-edge-like energy . values of InGaN QWs on InGaN ULs, samples 1–5 (closed circles) are compared with those on GaN ULs (samples 6 and 7) (closed triangles) and those reported in the literature (closed diamonds): (a) Ref. 17, (b) Ref. 18, and (c) Ref. 11.
(a) EL spectra obtained from violet LEDs using an InGaN UL and a GaN UL at room temperature. The injected current (density) was . (b) Integrated EL intensity plotted as a function of the injected current for violet LEDs using an InGaN UL (closed circles) and a GaN UL (closed triangles).
Obtained fitting parameters: the transfer of excitons to the local potential minima at the lower energy side , the energy similar to the mobility edge , and the depth of localization (potential fluctuation) .
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