1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Direct-bonded tandem solar cell
Rent:
Rent this article for
USD
10.1063/1.2347280
/content/aip/journal/apl/89/10/10.1063/1.2347280
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/10/10.1063/1.2347280
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

characteristics of the bonded heterointerfaces for (a) and (b) . Positive bias voltage was applied from the GaAs side.

Image of FIG. 2.
FIG. 2.

Elemental concentration profiles across the bonded heterointerfaces measured by SIMS (a) before and (b) after the annealing in at . The profiles look extended along the depth than they actually are due to the roughness of the sputtered surface due to the thinning process by mechanical polishing.

Image of FIG. 3.
FIG. 3.

Spectral response for the bonded two-junction solar cell and unbonded GaAs and InGaAs subcells and (inset) curve for the bonded solar cell at 1 sun, AM1.5G.

Loading

Article metrics loading...

/content/aip/journal/apl/89/10/10.1063/1.2347280
2006-09-06
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct-bonded GaAs∕InGaAs tandem solar cell
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/10/10.1063/1.2347280
10.1063/1.2347280
SEARCH_EXPAND_ITEM