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Electrically adjustable intersubband absorption of a superlattice grown on a transistorlike structure
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10.1063/1.2348759
/content/aip/journal/apl/89/10/10.1063/1.2348759
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/10/10.1063/1.2348759
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

EMA of samples A, B, and C measured under the MIS contact. The absorption peak at (A) originates from the 2DEG and the ones at [(B) and (C)] from the SL region. The cutoff at marks the lower end of the measurement range. Inset: schematic view of the sample mount.

Image of FIG. 2.
FIG. 2.

Schematic conduction band diagram for sample B.

Image of FIG. 3.
FIG. 3.

EMA of samples A, B, and C measured under the MS contact, normalized to 1 at the respective peak wave number.

Image of FIG. 4.
FIG. 4.

EMA of sample B for different voltages, normalized to 1 at the 2DEG peak wave number. The cutoff at marks the lower end of the measurement range.

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/content/aip/journal/apl/89/10/10.1063/1.2348759
2006-09-08
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrically adjustable intersubband absorption of a GaN∕AlN superlattice grown on a transistorlike structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/10/10.1063/1.2348759
10.1063/1.2348759
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