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Compositional and structural changes in following deep ion implantation for film exfoliation
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10.1063/1.2352798
/content/aip/journal/apl/89/11/10.1063/1.2352798
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/11/10.1063/1.2352798
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RBS/channeling data for implanted with ( ion dose). (a) Annealing evolution of the lattice disorder; the yield count level for a random orientation is approximately 1700. (b) Comparison of a 50 and a implant under similar oven annealing conditions; a rapid annealing is also shown.

Image of FIG. 2.
FIG. 2.

Implantation-induced void creation in an unannealed sample (, dose). (a) Cross-sectional TEM image showing shape oblate-shaped voids. (b) TEM image showing a planar nanoscale cleave as the result of implantation.

Image of FIG. 3.
FIG. 3.

NRA profile of Li content and SRIM simulation of He in He-implanted (, dose). The sharp dip in Li concentration is consistent with the He implantation layer depth and straggle.

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/content/aip/journal/apl/89/11/10.1063/1.2352798
2006-09-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Compositional and structural changes in LiNbO3 following deep He+ ion implantation for film exfoliation
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/11/10.1063/1.2352798
10.1063/1.2352798
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