Full text loading...
(a) Schematic diagram of the device layout (plan view). (b) Schematic diagram showing structure after bevel etching (bevel angle greatly exaggerated). Dopants are indicated by “+” (Te donor delta layer) and “−” (Be acceptor slab doping). The quantum well is labeled “QW.” The shaded areas are occupied by electrons (left) and holes (right).
Current/voltage characteristics between contacts over the range of , where forward bias corresponds to the -type contact being positively biased compared to the -type contact. Note that the forward bias series resistance has been subtracted from the data to aid clarity.
(Color online) Plot of measured emittance as a function of position in the image plane in the detection optics.
Temperature dependence of the measured emittance over the range of . The line is an exponential fit to the data.
Article metrics loading...