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Lateral light emitting diodes in quantum wells
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10.1063/1.2354015
/content/aip/journal/apl/89/11/10.1063/1.2354015
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/11/10.1063/1.2354015
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of the device layout (plan view). (b) Schematic diagram showing structure after bevel etching (bevel angle greatly exaggerated). Dopants are indicated by “+” (Te donor delta layer) and “−” (Be acceptor slab doping). The quantum well is labeled “QW.” The shaded areas are occupied by electrons (left) and holes (right).

Image of FIG. 2.
FIG. 2.

Current/voltage characteristics between contacts over the range of , where forward bias corresponds to the -type contact being positively biased compared to the -type contact. Note that the forward bias series resistance has been subtracted from the data to aid clarity.

Image of FIG. 3.
FIG. 3.

(Color online) Plot of measured emittance as a function of position in the image plane in the detection optics.

Image of FIG. 4.
FIG. 4.

Temperature dependence of the measured emittance over the range of . The line is an exponential fit to the data.

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/content/aip/journal/apl/89/11/10.1063/1.2354015
2006-09-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lateral light emitting n-i-p diodes in InSb∕AlxIn1−xSb quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/11/10.1063/1.2354015
10.1063/1.2354015
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