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dark current characteristic as a function of temperature for ten-stack QDIPs grown by low pressure MOCVD (sample A).
Arrenius plots at various applied biases for undoped QDIPs (sample A).
Calculated activation energies as a function of applied bias for sample A at . The insert shows graphs of tunneling current mechanisms discussed in text.
Comparison of dark current characteristics and activation energies for samples A (undoped QDs), B (QDs with Si-doping level of ), and C (QDs with Si-doping level of ) all taken at . (a) characteristics, (b) Arrhenius plots for applied bias voltage, and (c) calculated activation energies as a function of applied bias voltage.
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