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Doping effect on dark currents in quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition
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10.1063/1.2354432
/content/aip/journal/apl/89/11/10.1063/1.2354432
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/11/10.1063/1.2354432
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

dark current characteristic as a function of temperature for ten-stack QDIPs grown by low pressure MOCVD (sample A).

Image of FIG. 2.
FIG. 2.

Arrenius plots at various applied biases for undoped QDIPs (sample A).

Image of FIG. 3.
FIG. 3.

Calculated activation energies as a function of applied bias for sample A at . The insert shows graphs of tunneling current mechanisms discussed in text.

Image of FIG. 4.
FIG. 4.

Comparison of dark current characteristics and activation energies for samples A (undoped QDs), B (QDs with Si-doping level of ), and C (QDs with Si-doping level of ) all taken at . (a) characteristics, (b) Arrhenius plots for applied bias voltage, and (c) calculated activation energies as a function of applied bias voltage.

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/content/aip/journal/apl/89/11/10.1063/1.2354432
2006-09-15
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Doping effect on dark currents in In0.5Ga0.5As∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/11/10.1063/1.2354432
10.1063/1.2354432
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