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(Color online) SIMS profiles of boron subjected to LA at with or without a post-LA low temperature RTA at for . Minimum diffusion near the tail region occurred due to the additional RTA cycle. The implantation was performed at with a dose of , while the amorphization implantation was conducted at with a dose of .
(Color online) characteristics of junction subjected to (a) only LA and (b) LA followed by a RTA. Both single-pulse (1P) and ten-pulse (10P) LAs for laser fluences of 0.5 and were used for (a) and (b). The post-LA RTA in (b) was conducted at and . The implantation was performed at with a dose of , while the preamorphization implantation was conducted at with a dose of .
Cross-sectional transmission electron microscopy micrographs of unpatterned PAI samples subjected to a single-pulse LA at (a) only and (b) with a post-LA RTA at for . The inset in (a) is the electron diffraction pattern showing epitaxial silicon (001) obtained from the recrystallized region that contains crystalline defects. The implantation conditions are the same as those used in Fig. 1.
(Color online) (a) Drain current vs drain bias and (b) drain current vs gate bias characteristics of a subjected to a single-pulse LA at with a post-LA RTA at for or only to a ten-pulse LA at . The low drive current is due to unsilicided source/drain and gate regions. The implantation conditions are the same as those used in Fig. 2.
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