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FET based on a single CdSe nanoribbon. (a) SEM image of the CdSe SNRFET device. (b) HRTEM of the CdSe nanoribbon. The nanoribbon has a growth direction of . (c) Schematic diagram of FET and photoconductive measurements.
Electron transfer characteristics of CdSe SNRFET in the dark. (a) vs curves for different that range from . (b) vs plots for different . The linear regimes of the curves are fitted by the dash lines. The inset shows the logarithmic plot of the transfer characteristics at .
Electron transfer characteristics of CdSe SNRFET under illumination by light of . vs curves for different that range from . The inset shows plots for different .
(a) vs curves for different incident light intensities with fixed of . Curves correspond to a dark condition and light intensities of 19, 55, 190, 268, and , respectively. (b) Electron mobility vs light intensity. (c) Time response of the CdSe SNRFET device at gate voltages of 0, 5, and while the is fixed at . The nanoribbon is exposed to light with a fixed intensity of .
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