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(a) Schematic diagram of the SWCNT device, where Au electrodes are defined by EBL followed by deposition of of Ti and of Au and catalyst islands are fabricated by a second EBL step and subsequent deposition of of Al and of Fe. (b) Scanning electron microscope image showing an as-grown SWCNT suspended between two Au electrodes as indicated by the arrow; the Au electrodes are separated by approximately .
A representative high defect SWCNT device. (a) curves measured at room temperature and for . (b) as a function of gate voltage for and . (c) Differential conductance as a function of bias and gate voltage for measured by superimposing a small ac voltage on top of .
Differential conductance as a function of gate voltage ( vs ) of two low defect SWCNT devices measured at and under a small ac voltage between the drain and source, . (a) Four-peak shell structure characteristic of a SWCNT quantum dot. (b) In this SWCNT device, interdot tunneling splits each of the otherwise equally spaced Coulomb blockade peaks into two peaks in a weakly coupled double quantum dot system. (c) Differential conductance as a function of bias and gate voltage of the device in (b) at and under .
Range of growth parameters, the number of samples (in parentheses), and the corresponding electron transport related defect levels of SWCNT devices.
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