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Pump power dependent PL spectra of ten pairs of periodic gain structures. (a) InGaAs single QW and (b) InGaAs single QW.
Pump power dependent PL spectra of of ten pairs of periodic gain structures. (a) InGaAs triple quantum well, (b) InGaAs single QW with AlGaAs nonabsorbing laser, and (c) InGaAs triple QW with AlGaAs nonabsorbing layer.
Conduction band diagrams of three different RPG structures. (a) InGaAs triple QWs are directly strain compensated by GaAsP layers. (b) GaAsP strain compensation layer is positioned to nonabsorbing layer. (c) is used as both nonabsorbing and strain compensating layers.
Thermal characteristics of output power according to (a) the three different VECSEL structures, and (b) according to the input power of structure B.
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