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high electron mobility transistor structures grown on -type Si substrates
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10.1063/1.2357005
/content/aip/journal/apl/89/13/10.1063/1.2357005
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357005
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Zero-field resistivity measurements as a function of temperature for sample A and sample B.

Image of FIG. 2.
FIG. 2.

(Color online) Magnetoresistivity measurements as a function of magnetic field for sample A and sample B at . The inset shows the logarithmic of the amplitudes of magnetoresistance oscillations as a function of for sample B. The solid line corresponds to a fit to , where is a constant and is the quantum mobility.

Image of FIG. 3.
FIG. 3.

(Color online) at various . From top to bottom: , 13.44, 13.07, 12.59, and , respectively. The solid lines correspond to fits to Eq. (1). The inset shows the measured effective mass at various .

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/content/aip/journal/apl/89/13/10.1063/1.2357005
2006-09-26
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Al0.15Ga0.85N∕GaN high electron mobility transistor structures grown on p-type Si substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357005
10.1063/1.2357005
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