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curves at 4.2 and derived from magnetization measurements.
Grain size distributions for the two pure samples, measured from TEM dark field images. Both samples show a preponderance of grains in diameter, but grain growth does occur at . Doped samples show the same trend, but analysis is complicated by SiC reaction phases. Approximately 7% of the grains in the sample and 9% of the grains in the sample are larger than and are not included in the figure.
Normalized pinning force of the four samples at , where the criterion for the irreversibility field is . The SiC-doped samples show distinct additional pinning in higher reduced fields, a result seen at all temperatures.
90% and 10% of normal state resistivities in the resistive transition curves for two samples of . 90% of normal state resistivity is taken as . The much broader transition of of the sample suggests that significant inhomogeneity is introduced by alloying and by reaction at low temperatures. This sample also has the largest upper critical field.
Superconducting properties of the samples as a function of reaction temperature and SiC addition.
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