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Cross-sectional scanning electron microscopy images of sample A (a) and sample B (b): a broad interface (a) and sharp interface (b) between the Au electrode and the pentacene film.
Drain current vs drain voltage characteristics of the pentacene TFTs (the gate voltage was varied between 0 and in steps of ): (a) sample A and (b) sample B. The insets show the linear region of each curve (the gate voltage was varied between 0 and in steps of ). (c) vs characteristics at : sample A (open) and sample B (closed), (d) vs (circle) and vs (square) characteristics of the pentacene TFTs.
(a) Channel width normalized of sample B as a function of channel length at gate voltages varying from at interval, (b) Channel width normalized contact resistance as a function of gate voltage.
Carbon -edge NEXAFS spectra of the pentacene films for different angles of incidence, , of incoming photons before and after the slow deposition of gold electrode (, ).
Conditions of gold deposition onto the pentacene films.
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