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AFM images of two samples with nominally 2.5 ML of InSb on InAs. Left: sample grown using SE; Right: sample grown using atomic-layer epitaxy. The size of the images is .
Results of the AFM statistical analysis of several samples. The left column shows the results for the samples grown on InAs and the right column for samples grown on GaAs. The size analysis for every single sample are based on 100 QDs. (●): SE samples, (◇): ALE samples, and (▵): InSb:N samples.
Atomic force micrograph of a 2.5 ML sample grown using ALE technique. The size of the image is . The double QDs with an areal density of about are 25% of the total number of QDs.
AFM image and the size profile of a 2.5 ML sample. The size profile is along a selected line in the ⟨110⟩ directions.
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