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InSb and InSb:N multiple quantum dots
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10.1063/1.2357546
/content/aip/journal/apl/89/13/10.1063/1.2357546
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357546
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM images of two samples with nominally 2.5 ML of InSb on InAs. Left: sample grown using SE; Right: sample grown using atomic-layer epitaxy. The size of the images is .

Image of FIG. 2.
FIG. 2.

Results of the AFM statistical analysis of several samples. The left column shows the results for the samples grown on InAs and the right column for samples grown on GaAs. The size analysis for every single sample are based on 100 QDs. (●): SE samples, (◇): ALE samples, and (▵): InSb:N samples.

Image of FIG. 3.
FIG. 3.

Atomic force micrograph of a 2.5 ML sample grown using ALE technique. The size of the image is . The double QDs with an areal density of about are 25% of the total number of QDs.

Image of FIG. 4.
FIG. 4.

AFM image and the size profile of a 2.5 ML sample. The size profile is along a selected line in the ⟨110⟩ directions.

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/content/aip/journal/apl/89/13/10.1063/1.2357546
2006-09-27
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InSb and InSb:N multiple quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357546
10.1063/1.2357546
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