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Photoexcitation effects on charge transports of Ge quantum-dot resonant tunneling diodes
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10.1063/1.2357550
/content/aip/journal/apl/89/13/10.1063/1.2357550
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357550
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Figures

Image of FIG. 1.
FIG. 1.

(a) Scanning electron microscopy micrograph of a -on-insulator nanowire matrix. (b) Transmission-electron microscopy image of Ge QDs formed by thermal oxidation of a -on-insulator nanowire. The sample has been capped with an oxide membrane for better TEM observation.

Image of FIG. 2.
FIG. 2.

(Color online) (a) and (b) characteristics of a Ge-QD RTD under different photoexcitation conditions. The curves are shifted vertically for clarity.

Image of FIG. 3.
FIG. 3.

(Color online) Particle interaction strengths as a function of dot diameter.

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/content/aip/journal/apl/89/13/10.1063/1.2357550
2006-09-26
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoexcitation effects on charge transports of Ge quantum-dot resonant tunneling diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357550
10.1063/1.2357550
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