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(a) Scanning electron microscopy micrograph of a -on-insulator nanowire matrix. (b) Transmission-electron microscopy image of Ge QDs formed by thermal oxidation of a -on-insulator nanowire. The sample has been capped with an oxide membrane for better TEM observation.
(Color online) (a) and (b) characteristics of a Ge-QD RTD under different photoexcitation conditions. The curves are shifted vertically for clarity.
(Color online) Particle interaction strengths as a function of dot diameter.
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