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quantum-well light-emitting diodes with high internal quantum efficiencies
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10.1063/1.2357558
/content/aip/journal/apl/89/13/10.1063/1.2357558
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357558
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measured emittance and internal quantum efficiency of (a) bulk sample B1 and (b) quantum-well sample QW1 as a function of temperature. The inset shows peak emission energy as a function of temperature for B1, QW1, and predicted data for an 8% AlInSb band gap. The solid lines are a guide to the eyes only.

Image of FIG. 2.
FIG. 2.

Measured emittance and internal quantum efficiency of (a) bulk sample B2 and (b) quantum-well sample QW2 as a function of temperature. The inset shows peak emission energy as a function of temperature for B2, QW2, and predicted data for an InSb band gap. The solid lines are a guide to the eyes only.

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/content/aip/journal/apl/89/13/10.1063/1.2357558
2006-09-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InSb∕AlxIn1−xSb quantum-well light-emitting diodes with high internal quantum efficiencies
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357558
10.1063/1.2357558
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