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Halftoning band gap of quantum dots using inductivelycoupled argon plasma-enhanced intermixing
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10.1063/1.2357563
/content/aip/journal/apl/89/13/10.1063/1.2357563
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357563
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Band-gap blueshift vs Ar plasma exposure time for samples being exposed and annealed. The level of thermal shift is obtained from an annealed-only sample.

Image of FIG. 2.
FIG. 2.

(Color online) XPS spectra measured from the InP cap layer for (i) as-grown sample and samples exposed to Ar plasma for (ii) and (iii) . The counts from In and P core levels for the three samples are labeled as well.

Image of FIG. 3.
FIG. 3.

(Color online) Band-gap blueshift vs rf power under (i) ICP power, (ii) ICP power, and (iii) ICP power. The plasma exposure time was fixed at .

Image of FIG. 4.
FIG. 4.

(Color online) PL spectra measured at from (i) an as-grown sample, (ii) a sample exposed to argon plasma and annealed with a -thick layer ( layer was removed before PL measurement), and bare samples exposed to argon plasma, chemically wet etched in (1:2) solution for (iii) , (iv) , (v) , and (vi) , and finally annealed.

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/content/aip/journal/apl/89/13/10.1063/1.2357563
2006-09-25
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Halftoning band gap of InAs∕InP quantum dots using inductivelycoupled argon plasma-enhanced intermixing
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357563
10.1063/1.2357563
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