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Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited gate dielectric
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10.1063/1.2357566
/content/aip/journal/apl/89/13/10.1063/1.2357566
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357566
/content/aip/journal/apl/89/13/10.1063/1.2357566
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/content/aip/journal/apl/89/13/10.1063/1.2357566
2006-09-25
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357566
10.1063/1.2357566
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