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characteristics of ALD MOS structure at an ac frequency of . The up triangles are the data taken from ; the down triangles are the data obtained from . The area of electrode is and the MOS capacitor was measured at room temperature. Inset: Cross section of an capacitor fabricated for this study.
Capacitance as a function of bias with temperature as parameter measured at . Acceptor concentration is and oxide thickness is .
Temperature dependence of the transition frequency between high and low frequency curves. Activation energy of the minority-carrier recombination is obtained from the slope of the linear fitting trace.
Temperature dependence of the drain current at of a gate length inversion channel enhancement-mode InGaAs MOSFET with a ALD as a gate dielectric.
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