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Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited gate dielectric
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10.1063/1.2357566
/content/aip/journal/apl/89/13/10.1063/1.2357566
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357566
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

characteristics of ALD MOS structure at an ac frequency of . The up triangles are the data taken from ; the down triangles are the data obtained from . The area of electrode is and the MOS capacitor was measured at room temperature. Inset: Cross section of an capacitor fabricated for this study.

Image of FIG. 2.
FIG. 2.

Capacitance as a function of bias with temperature as parameter measured at . Acceptor concentration is and oxide thickness is .

Image of FIG. 3.
FIG. 3.

Temperature dependence of the transition frequency between high and low frequency curves. Activation energy of the minority-carrier recombination is obtained from the slope of the linear fitting trace.

Image of FIG. 4.
FIG. 4.

Temperature dependence of the drain current at of a gate length inversion channel enhancement-mode InGaAs MOSFET with a ALD as a gate dielectric.

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/content/aip/journal/apl/89/13/10.1063/1.2357566
2006-09-25
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357566
10.1063/1.2357566
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