Full text loading...
(Color online) Deformation of samples—direct results of stylus profiler measurements: (a) thick films grown during at different temperatures and (b) thick films grown at using different growth rates. Growth duration is indicated on the plot. Dashed line corresponds to thick sample.
(Color online) Variation of the curvature along the sample diameter calculated for the samples presented on Fig. 1.
(Color online) Residual strain (full points—measured values, dash-dot line—fit) compared to the theoretical value of thermoelastic strain (dashed line): (a) as a function of growth temperature and (b) as a function of growth duration—the thickness of each layer is indicated on the plot.
(Color online) (a) Intrinsic strain of films as a function of growth duration at (on the left) and as a function of growth temperature (on the right). The deduced values of creep exponent and activation energy are reported on the plot. (b) The full width at half maximum of SiC (002) and Si (004) rocking curves (close downward triangles and open upward triangles, respectively) measured on the samples grown at different temperatures.
Lattice parameters and elastic constants of SiC and Si used to calculate the thermoelastic strain of SiC films.
Article metrics loading...