banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Stress relaxation during the growth of thin films
Rent this article for


Image of FIG. 1.
FIG. 1.

(Color online) Deformation of samples—direct results of stylus profiler measurements: (a) thick films grown during at different temperatures and (b) thick films grown at using different growth rates. Growth duration is indicated on the plot. Dashed line corresponds to thick sample.

Image of FIG. 2.
FIG. 2.

(Color online) Variation of the curvature along the sample diameter calculated for the samples presented on Fig. 1.

Image of FIG. 3.
FIG. 3.

(Color online) Residual strain (full points—measured values, dash-dot line—fit) compared to the theoretical value of thermoelastic strain (dashed line): (a) as a function of growth temperature and (b) as a function of growth duration—the thickness of each layer is indicated on the plot.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Intrinsic strain of films as a function of growth duration at (on the left) and as a function of growth temperature (on the right). The deduced values of creep exponent and activation energy are reported on the plot. (b) The full width at half maximum of SiC (002) and Si (004) rocking curves (close downward triangles and open upward triangles, respectively) measured on the samples grown at different temperatures.


Generic image for table
Table I.

Lattice parameters and elastic constants of SiC and Si used to calculate the thermoelastic strain of SiC films.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stress relaxation during the growth of 3C-SiC∕Si thin films