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Two-dimensional electron gas in Zn polar heterostructures grown by radical source molecular beam epitaxy
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10.1063/1.2357588
/content/aip/journal/apl/89/13/10.1063/1.2357588
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357588
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Layer structure for a Zn polar heterostructure. The growth direction is ⟨0001⟩ for Zn polarity.

Image of FIG. 2.
FIG. 2.

(Color online) Mobility and sheet carrier concentration for Zn polar heterostructure as a function of the Mg composition by Hall measurements.

Image of FIG. 3.
FIG. 3.

(Color online) carrier concentration profile vs penetration depth of heterostructure. In this case, the ZnMgO thickness is .

Image of FIG. 4.
FIG. 4.

(Color online) Temperature-dependent Hall measurements for Zn polar ZnO and heterostructures; carrier concentration (a) and mobility (b).

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/content/aip/journal/apl/89/13/10.1063/1.2357588
2006-09-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Two-dimensional electron gas in Zn polar ZnMgO∕ZnO heterostructures grown by radical source molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357588
10.1063/1.2357588
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