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Terahertz transmission characteristics of high-mobility GaAs and InAs two-dimensional-electron-gas systems
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10.1063/1.2357605
/content/aip/journal/apl/89/13/10.1063/1.2357605
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357605

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Field transmission magnitude (upper panel) and phase (lower panel) of the GaAs (red data) and InAs (black data) 2DEGs. The solid symbols are the original experimental data. The dotted lines are fits to Eq. (2) using the variation of inferred from the thin-film approximation [Eq. (3)]. Circles: , triangles: , and squares: . Inset: schematic of the key features of the terahertz TDS system.

Image of FIG. 2.
FIG. 2.

Frequency dependence of inferred from the thin-film approximation [Eq. (3)]. Circles: , open squares: , triangles: , and filled squares: . The solid lines are interpolated between data points.

Image of FIG. 3.
FIG. 3.

Temperature dependence of , , and in the GaAs (upper) and InAs (lower) 2DEGs. The solid lines are guides for the eyes.

Tables

Generic image for table
Table I.

Summary of the key parameters of the GaAs and InAs 2DEG samples.

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/content/aip/journal/apl/89/13/10.1063/1.2357605
2006-09-26
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Terahertz transmission characteristics of high-mobility GaAs and InAs two-dimensional-electron-gas systems
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357605
10.1063/1.2357605
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