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Schottky barrier height of boride-based rectifying contacts to
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10.1063/1.2357855
/content/aip/journal/apl/89/13/10.1063/1.2357855
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357855

Figures

Image of FIG. 1.
FIG. 1.

XPS spectra without (top) and with (bottom) a boride-based overlayer. In the top figure, the left-hand spectrum corresponds to the Ga core level, whereas the right-hand panel presents the spectrum of the valence band region.

Image of FIG. 2.
FIG. 2.

Forward-bias current-voltage characteristic of Schottky diodes as a function of measurement temperature.

Image of FIG. 3.
FIG. 3.

As-measured and after defect layer correction dependences of vs of Schottky diodes.

Tables

Generic image for table
Table I.

Characteristics of -based rectifying contacts to .

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/content/aip/journal/apl/89/13/10.1063/1.2357855
2006-09-26
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Schottky barrier height of boride-based rectifying contacts to p-GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357855
10.1063/1.2357855
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