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Cross-sectional SEM image of highly aligned InP nanowires grown on Si (111). The marker corresponds to .
(a) Low-magnification and (b) high-resolution TEM images of InP nanowires. The marker in (a) corresponds to .
Cross-sectional SEM images of (a) lateral epitaxial growth of InP nanowires across a -wide trench and connecting to an opposite sidewall. The marker corresponds to . (b) Details of impinging ends of InP nanowires. The marker corresponds to . The growth direction is from left to right in both (a) and (b).
SEM image showing secondary growth of nanowires near the impinging ends of bridging nanowires. The growth direction is from right to left. The marker corresponds to .
Single InP nanobridge formed between isolated Si electrodes. The horizontal surfaces are free of nanowires. The marker corresponds to .
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