1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition
Rent:
Rent this article for
USD
10.1063/1.2357890
/content/aip/journal/apl/89/13/10.1063/1.2357890
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357890
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional SEM image of highly aligned InP nanowires grown on Si (111). The marker corresponds to .

Image of FIG. 2.
FIG. 2.

(a) Low-magnification and (b) high-resolution TEM images of InP nanowires. The marker in (a) corresponds to .

Image of FIG. 3.
FIG. 3.

Cross-sectional SEM images of (a) lateral epitaxial growth of InP nanowires across a -wide trench and connecting to an opposite sidewall. The marker corresponds to . (b) Details of impinging ends of InP nanowires. The marker corresponds to . The growth direction is from left to right in both (a) and (b).

Image of FIG. 4.
FIG. 4.

SEM image showing secondary growth of nanowires near the impinging ends of bridging nanowires. The growth direction is from right to left. The marker corresponds to .

Image of FIG. 5.
FIG. 5.

Single InP nanobridge formed between isolated Si electrodes. The horizontal surfaces are free of nanowires. The marker corresponds to .

Loading

Article metrics loading...

/content/aip/journal/apl/89/13/10.1063/1.2357890
2006-09-28
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357890
10.1063/1.2357890
SEARCH_EXPAND_ITEM