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(a) Optical microscope image of the resist pattern obtained by IL using moiré effect, (b) corresponding resist distribution calculated by Eqs. (1)–(3), (c) optical microscope image of the resulting structure in LN after EFO, and (d) corresponding resist distribution calculated by Eqs. (1)–(3).
(a) SEM image of the submicron structures fabricated in LN by the EFO in frame B of Fig. 1(a), and (b) SEM image of the central region of Fig. 2(a). The magnified view in the inset shows that the holes are about sized.
(Color online) (a) Simulation of the resist surface profile corresponding to a beating period of about , (b) corresponding line profile along the white line, (c) corresponding surface plot of the EFD resulting from the FEMLAB model, and (d) profile of the EFD along the direction at about depth underneath the face.
(a) Magnified and overlapped views of the EFD profile in correspondence of picks A and B in Fig. 3(d), and (b) EFD behavior along the crystal axis under the resist dots for different simulated thicknesses.
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