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Origin of forward leakage current in GaN-based light-emitting devices
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10.1063/1.2357930
/content/aip/journal/apl/89/13/10.1063/1.2357930
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357930
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

[(a) and (b)] Typical surface pits of the etched sample A and sample B. [(c) and (d)] Zoomed area to observe in detail. The average EPDs are and for samples A and B, respectively. Larger size (30 times larger than average pit size) EPDs are and for samples A and B.

Image of FIG. 2.
FIG. 2.

curves for samples A and B in a forward-biased region. (a) Linear scale; inset: the diode circuit model. (b) Log scale.

Image of FIG. 3.
FIG. 3.

Theoretically calculated results. (a) Sample B is explained by adopting that , , and ; parallel resistance determines the amount of leakage current; (b) saturation current determines the threshold point that leakage current was rapidly increasesd; (c) ideality factor in a depletion region determines the increase slope of leakage current. Sample A is explained by adopting that , , and .

Image of FIG. 4.
FIG. 4.

curves for samples A and B in a reverse-biased region. Inset: the ratio of leakage current of sample B to that of sample A.

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/content/aip/journal/apl/89/13/10.1063/1.2357930
2006-09-28
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Origin of forward leakage current in GaN-based light-emitting devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2357930
10.1063/1.2357930
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