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[(a) and (b)] Typical surface pits of the etched sample A and sample B. [(c) and (d)] Zoomed area to observe in detail. The average EPDs are and for samples A and B, respectively. Larger size (30 times larger than average pit size) EPDs are and for samples A and B.
curves for samples A and B in a forward-biased region. (a) Linear scale; inset: the diode circuit model. (b) Log scale.
Theoretically calculated results. (a) Sample B is explained by adopting that , , and ; parallel resistance determines the amount of leakage current; (b) saturation current determines the threshold point that leakage current was rapidly increasesd; (c) ideality factor in a depletion region determines the increase slope of leakage current. Sample A is explained by adopting that , , and .
curves for samples A and B in a reverse-biased region. Inset: the ratio of leakage current of sample B to that of sample A.
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