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(Color online) Schematics describing the phenomenon of hysteresis: (a) A typical SWCNT FET in its three-terminal configuration for measuring transfer characteristics. (b) Transfer characteristics of a nanotube FET. The ideal case is shown with a solid line. The dotted lines show how the curves will shift during a forward and a reverse sweep. The corresponding modified positions of the threshold gate voltages are also shown. (c) Schematic of an equivalent series circuit, based on which the charge injection, its subsequent accumulation, and the resulting phenomenon of hysteresis have been modeled.
(Color online) (a) Determination of the hysteresis parameters and device properties from a time decay of drain current in a SWCNT FET. Open circles denote experimental data. , , . The values obtained from the fit (solid line) are , , , , . These values are then used to predict measured TCs for (b) different sweeping times, , , and (c) different hold times , , in the same device. Predicted TCs [(b) and (c), solid line] are in good agreement with experimental data (open circles). Predicted trends in the position of as a function of (d) for , , (e) for , , and (e) for , .
(Color online) Application of the model on data digitized from Ref. 3. (a) TCs for different sweeping times, ,, , . Solid line shows the fit. The fit parameters obtained are , , , , . (b) TCs for forward and reverse sweeps in a suspended nanotube, in air (before), and under vacuum (after). Here, , , . The fit parameters for the forward sweep (and reverse sweep, where different) are (and ), (and 0.6), , , in ambient conditions. Under vacuum, , , , .
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