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Resonant and voltage-tunable terahertz detection in nanometer transistors
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10.1063/1.2358816
/content/aip/journal/apl/89/13/10.1063/1.2358816
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2358816
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Design of the high electron mobility transistors with a T-shaped gate.

Image of FIG. 2.
FIG. 2.

Response of -based device exposed to the terahertz radiation as a function of the gate voltage at different temperatures. Excitation frequency is . Data at different temperatures are shifted in the vertical scale.

Image of FIG. 3.
FIG. 3.

(a) Response of -based device to the terahertz radiation as a function of the gate voltage at different (1.8, 2.5, and ) frequencies. . The arrows indicate resonance positions. For the sake of clarity the curves are shifted in the vertical scale. The dashed lines indicate zero response. The calculated plasmon frequency as a function of the gate voltage for is shown by the solid line (left axis). The error bars correspond to the linewidth of the measured plasmon resonance peaks. (b) NEP estimated using the minimum detectors noise as a function of the gate voltage for at .

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/content/aip/journal/apl/89/13/10.1063/1.2358816
2006-09-29
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/13/10.1063/1.2358816
10.1063/1.2358816
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