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Experimental setup for fabrication of CN nanoparticles based on HC-GD deposition technique.
SEM images of typical distributions of nano-CN particles on Si (100) substrates prepared for at discharge voltage of , square-pulsed (, ) bias voltage of , and nitrogen gas pressure of .
SEM image of nanoscale CN particles prepared for at a square-pulsed (, ) bias voltage of .
SEM images of micro-order, disk type of CN particles and their distribution for four times of turning on and off bias voltages for each. The total period for plasma sputtering deposition is . Plasma discharge voltage is and nitrogen gas pressure is .
Raman spectra of the samples related to (a) Fig. 2 and (b) Fig. 4.
Microscope images of the sample (particles) synthesized on glass substrates at plasma discharge voltage of and nitrogen gas pressure of . Each carbon nitride particle has nearly the same size and pattern.
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