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Growth and control of microscale to nanoscale carbon nitride particles
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10.1063/1.2355470
/content/aip/journal/apl/89/14/10.1063/1.2355470
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/14/10.1063/1.2355470
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental setup for fabrication of CN nanoparticles based on HC-GD deposition technique.

Image of FIG. 2.
FIG. 2.

SEM images of typical distributions of nano-CN particles on Si (100) substrates prepared for at discharge voltage of , square-pulsed (, ) bias voltage of , and nitrogen gas pressure of .

Image of FIG. 3.
FIG. 3.

SEM image of nanoscale CN particles prepared for at a square-pulsed (, ) bias voltage of .

Image of FIG. 4.
FIG. 4.

SEM images of micro-order, disk type of CN particles and their distribution for four times of turning on and off bias voltages for each. The total period for plasma sputtering deposition is . Plasma discharge voltage is and nitrogen gas pressure is .

Image of FIG. 5.
FIG. 5.

Raman spectra of the samples related to (a) Fig. 2 and (b) Fig. 4.

Image of FIG. 6.
FIG. 6.

Microscope images of the sample (particles) synthesized on glass substrates at plasma discharge voltage of and nitrogen gas pressure of . Each carbon nitride particle has nearly the same size and pattern.

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/content/aip/journal/apl/89/14/10.1063/1.2355470
2006-10-02
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and control of microscale to nanoscale carbon nitride particles
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/14/10.1063/1.2355470
10.1063/1.2355470
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