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Pressure sensing by flexible, organic, field effect transistors
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10.1063/1.2357924
/content/aip/journal/apl/89/14/10.1063/1.2357924
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/14/10.1063/1.2357924
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Basic structure of the device. Inset: detail of the channel area of the device. (b) Experimental setup for testing the pressure sensitivity of the device.

Image of FIG. 2.
FIG. 2.

(a) Comparison between vs curves with different pressure states. (b) vs time curves with different applied pressures. Inset: effect of the pressure application and removal.

Image of FIG. 3.
FIG. 3.

(a) Mobility, (b) contact resistance, and (c) threshold voltage vs pressure.

Image of FIG. 4.
FIG. 4.

Comparison between threshold voltage vs pressure and mobility vs pressure in top contact and bottom contact devices.

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/content/aip/journal/apl/89/14/10.1063/1.2357924
2006-10-02
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pressure sensing by flexible, organic, field effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/14/10.1063/1.2357924
10.1063/1.2357924
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