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High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics
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10.1063/1.2358202
/content/aip/journal/apl/89/14/10.1063/1.2358202
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/14/10.1063/1.2358202
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color) Schematic view of a depletion-mode -channel GaAs MISFET (left) with a self-assembled nanodielectric (right) as the insulating layer. The SAND layers were sequentially deposited from solutions of precursors Alk, Stb, and Cap. SANDs [ ( thick), 3 ( thick)] are used for GaAs MISFET fabrication.

Image of FIG. 2.
FIG. 2.

(Color) (a) measurements on a pretreated GaAs MISFET showing small hysteresis and frequency dispersion. (b) measurements on HCl pretreated GaAs MISFET showing significant frequency dispersion on the flatband voltage and accumulation capacitance.

Image of FIG. 3.
FIG. 3.

(a) Leakage current density vs gate bias for GaAs MISFETS having different SAND film thicknesses. (b) Drain current vs drain bias as a function of gate bias for a gate length GaAs MISFET fabricated with a SAND. (c) Drain current vs gate bias (solid line) and intrinsic transconductance vs gate bias (empty squares) at . (d) Drain current versus drain bias as a function of gate bias for GaAs MISFET with SAND.

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/content/aip/journal/apl/89/14/10.1063/1.2358202
2006-10-02
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/14/10.1063/1.2358202
10.1063/1.2358202
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