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Highly ordered graphene for two dimensional electronics
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic of reciprocal space for graphite on SiC. Graphite rods (●) are rotated 30° from the SiC rods (엯). Shaded regions represent the effect of orientational disorder in the graphite. Radial and transverse x-ray scan directions for Fig. 2 are depicted in (a). (b) and (c) show LEED images acquired at electron energy. (b) A SiC(0001) Si-face surface with two graphene layers (UHV synthesis). (c) C-face surface with seven graphene layers (induction furnace synthesis).

Image of FIG. 2.
FIG. 2.

Radial scans through the graphite crystal truncation rod for both two layers of graphene grown on a Si-face sample (●) and seven layers of graphene grown on a C-face sample (엯). Solid lines are Lorentzian fits.

Image of FIG. 3.
FIG. 3.

Comparison of the full width at half maximum of the rod vs from (●) a two-layer graphene film grown on the Si face and (엯) an eight-layer film grown on a C-face substrate. Instrument broadening has been removed for clarification. The lines are fits to a geometric distribution of steps and step heights with either the (solid line) step height or the (dashed line) graphite step height.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly ordered graphene for two dimensional electronics