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Excitation wavelength dependence of terahertz emission from InN and InAs
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10.1063/1.2358938
/content/aip/journal/apl/89/14/10.1063/1.2358938
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/14/10.1063/1.2358938
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Time-domain wave forms of terahertz emission, normalized to pump and probe power, from bulk -type InAs and In-face excited with (solid line) and (dashed line) femtosecond pulses.

Image of FIG. 2.
FIG. 2.

Excitation wavelength dependence of terahertz amplitude, normalized to pump and probe power, from InN and InAs. The points indicate experimental data (solid circles: InAs and empty circles: InN) and lines indicate calculated results (solid: InAs and dashed: InN).

Image of FIG. 3.
FIG. 3.

Terahertz amplitude dependence on bulk carrier density for In- (solid circles) and N-face (empty circles) InN samples optically excited with . Calculated results for -type and -type InN are shown with solid and dashed lines, respectively.

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/content/aip/journal/apl/89/14/10.1063/1.2358938
2006-10-03
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Excitation wavelength dependence of terahertz emission from InN and InAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/14/10.1063/1.2358938
10.1063/1.2358938
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